| PART |
Description |
Maker |
| K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KSC2751 |
NPN (HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE)
|
Samsung semiconductor
|
| ADM3051 |
High Speed Industrial CAN Transceiver with Bus Protection for 24 V Systems
|
Analog Devices
|
| UPA1453 UPA1453H |
PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE
|
NEC[NEC]
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE
|
NEC[NEC]
|
| ADM2482EBRWZ ADM2482EBRWZ-REEL7 |
High Speed, Isolated RS-485 Transceiver with Integrated Transformer Driver; No of Pins: 16; Temperature Range: Industrial
|
ANALOG DEVICES INC
|
| OP467ARC/883C OP467AY/883C |
Quad Precision, High Speed Operational Amplifier; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Industrial QUAD OP-AMP, 1000 uV OFFSET-MAX, 22 MHz BAND WIDTH, CQCC20
Quad Precision, High Speed Operational Amplifier; Package: CERDIP GLASS SEAL; No of Pins: 14; Temperature Range: Industrial QUAD OP-AMP, 1000 uV OFFSET-MAX, 22 MHz BAND WIDTH, CDIP14
|
Analog Devices, Inc.
|
| K6R1016V1C-I20 K6R1016V1C K6R1016V1C-C10 K6R1016V1 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| OP249GPZ OP249GSZ-REEL7 5962-9151901M2A |
Dual, Precision JFET High Speed Operational Amplifier; Package: PDIP; No of Pins: 8; Temperature Range: Industrial DUAL OP-AMP, 3600 uV OFFSET-MAX, 4.7 MHz BAND WIDTH, PDIP8
Dual, Precision JFET High Speed Operational Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial DUAL OP-AMP, 3600 uV OFFSET-MAX, 4.7 MHz BAND WIDTH, PDSO8
Dual, Precision JFET High Speed Operational Amplifier; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military DUAL OP-AMP, 500 uV OFFSET-MAX, 4.7 MHz BAND WIDTH, CQCC20
|
Analog Devices, Inc.
|
| AD802205 AD8022AR-REEL AD8022AR-REEL7 AD8022ARZ-RE |
Dual High Speed, Low Noise Op Amp; Package: SOIC; No of Pins: 8; Temperature Range: Industrial DUAL OP-AMP, 6250 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDSO8
Dual High Speed, Low Noise Op Amp; Package: MSOP; No of Pins: 8; Temperature Range: Industrial DUAL OP-AMP, 6250 uV OFFSET-MAX, PDSO8
Dual High-Speed Low-Noise Op Amps DUAL OP-AMP, 6250 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDSO8
|
Analog Devices, Inc.
http://
|
| ACT-F1288N ACT-F1288N-150P7T ACT-F1288N-150P7Q ACT |
High speed 1 Megabit monolithic FLASH. Speed 150ns.
High speed 1 Megabit monolithic FLASH. Speed 90ns.
High speed 1 Megabit monolithic FLASH. Speed 70ns.
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH
High speed 1 Megabit monolithic FLASH. Speed 60ns.
High speed 1 Megabit monolithic FLASH. Speed 120ns.
|
AEROFLEX[Aeroflex Circuit Technology]
|
